Thermal annealing effects on morphology and electrical response in ultrathin film organic transistors

Year: 2004

Authors: Dinelli F., Murgia M., Biscarini F., De Leeuw D.M.

Autors Affiliation: CNR A, ISMN, Sez Bologna, I-40129 Bologna, Italy; Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

Abstract: Ultra-thin organic film transistors were annealed in vacuum at constant temperature and for different time intervals. This treatment eliminates unintentional doping and reduces hysteresis in I/V curves, both for pentacene and alpha-sexithienyl, without substantially improving the charge mobility. Devices that originally exhibited high and non-ohmic contact resistance never matched the characteristics of devices with well grown electrode/semiconductor interfaces, even after annealing. Prolonging the annealing time resulted in film rupture due to either re-crystallization or molecular desorption. This process started before healing of molecular disorder at the relevant interfaces could take place. (C) 2004 Elsevier B.V. All rights reserved.

Journal/Review: SYNTHETIC METALS

Volume: 146 (3)      Pages from: 373  to: 376

DOI: 10.1016/j.synthmet.2004.08.016

Citations: 34
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