Experimental analysis of mode-hopping in bulk semiconductor lasers

Year: 2005

Authors: Pedaci F., Giudici M., Tredicce JR., Giacomelli G.

Autors Affiliation: Institut Non-lineaire de Nice, UMR 6618 Centre National de la Recherche Scientifique – Universite de Nice Sophia-Antipolis, 06560 Valbonne, France; Istituto Nazionale Ottica Applicata, Largo E. Fermi 6, 50143 Firenze, Italy; INFM, UdR Firenze, Firenze, Italy

Abstract: In this work we experimentally study mode-hopping in bulk semiconductor lasers. This stochastic process is ruled by Kramers statistics with a decay rate depending on the laser parameters of the temperature of the substrate and the pumping current. For a general combination of these parameters the average residence times in the two active modes are not equal, resulting in an asymmetric probability distribution for the modal intensities. We show that, by choosing an appropriate path in the parameter space, we can vary the residence times of the two modes while holding their ratio constant. Along this path, the shape of modal intensities distributions are constant up to a scaling factor which is a function of the laser parameters. Then, the system can be described by a single Langevin equation. The effect of adding noise to the pumping current is also investigated.

Journal/Review: APPLIED PHYSICS B-LASERS AND OPTICS

Volume: 81 (7)      Pages from: 993  to: 1000

KeyWords: STOCHASTIC RESONANCE; COHERENCE RESONANCE; SYSTEM; PARTITION;
DOI: 10.1007/s00340-005-1987-y

Citations: 7
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