SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications

Year: 2018

Authors: Tudisco S., La Via F., Agodi C., Altana C., Borghi G., Boscardin M., Bussolino G., Calcagno L., Camarda M., Cappuzzello F., Carbone D., Cascino S., Casini G., Cavallaro M., Ciampi C., Cirrone G., Cuttone G., Fazzi A., Giove D., Gorini G., Labate L., Lanzalone G., Litrico G., Longo G., Lo Presti D., Mauceri M., Modica R., Moschetti M., Muoio A., Musumeci F., Pasquali G., Petringa G., Piluso N., Poggi G., Privitera S., Puglia S., Puglisi V., Rebai M., Ronchin S., Santangelo A., Stefanini A., Trifiro A., Zimbone M.

Autors Affiliation: Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, Catania, 95123, Italy; Institute for Microelectronics and Microsystems (IMM), National Research Council (CNR), VIII Strada, 5, Catania, 95121, Italy; Trento Institute for Fundamental Physics and Applications (TIFPA), National Institute for Nuclear Physics (INFN), Fondazione Bruno Kessler (FBK-Trento), Via Sommarive 14, Povo Trento, 38123, Italy; Istituto Nazionale di Ottica (INO), Consiglio Nazionale delle Ricerche (CNR), Via G. Moruzzi 1, Pisa, 56124, Italy; Istituto Nazionale di Fisica Nucleare (INFN)—Sezione di Catania, Italy; Department of Physics and Astronomy, University of Catania, Via S. Sofia 64, Catania, Italy; Paul Scherrer Institute, ODRA/116, Villigen, 5232, Switzerland; STMicroelectronics, Stradale Primosole, 50, Catania, 95121, Italy; Istituto Nazionale di Fisica Nucleare (INFN)—Sezione di Firenze, Via G. Sansone 1, Sesto Fiorentino, 50019, Italy; Dipartimento di Fisica, Università di Firenze, Via G. Sansone 1, Sesto Fiorentino, 50019, Italy; Istituto Nazionale di Fisica Nucleare (INFN)—Sezione di Milano, Department of Energy, Politecnico di Milano, Via Celoria 16, Milano, 20133, Italy; Istituto Nazionale di Fisica Nucleare (INFN)—Sezione di Milano Bicocca, Department of Physics, Università degli Studi di Milano-Bicocca, Piazza della Scienza 3, Milano, 20126, Italy; Facoltà di Ingegneria e Architettura, Università Kore, Cittadella Universitaria, Enna, 94100, Italy; LPE, XVI Strada, Catania, 95121, Italy; Dipartimento di Scienze MIFT dell’Universitá di Messina, V.le F. S. D’Alcontres 31, Massina, 98166, Italy

Abstract: Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.

Journal/Review: SENSORS

Volume: 18      Pages from: 2289-1  to: 2289-16

More Information: This research was funded by Istituto Nazionale di Fisica Nucleare (INFN).

KeyWords: silicon carbide; nuclear and particle detector; radiation hardness
DOI: 10.3390/s18072289

Citations: 33
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