Torus Breakdown in a Uni Junction Memristor

Year: 2018

Authors: Cinoux JM., Meucci R., Euzzor S., di Garbo A.

Autors Affiliation: [Cinoux, Jean-Marc] UMR CNRS 7020, Lab Informat & Syst, CS 60584, F-83041 Toulon 9, France.
[Meucci, Riccardo; Euzzor, Stefano] CNR, Ist Nazl Ott, Largo E Fermi 6, I-50125 Florence, Italy.
[di Garbo, Angelo] CNR, Ist Biofis, Via G Moruzzi 1, I-56124 Pisa, Italy.

Abstract: Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor’s direct current (DC) v(m)-i(m) characteristic for modeling the UJT’s DC current-voltage characteristic. This has led us to confirm on the one hand, that the UJT is a memristor and, on the other hand, to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.


Volume: 28 (10)      Pages from: 1850128-1  to: 1850128-11

KeyWords: Bifurcation (mathematics); Current voltage characteristics; Dynamical systems; Transistors, Autonomous dynamical systems; Dc current; Direct current; Electronic component; Limit-cycle; Memristor; Torus breakdown, Memristors
DOI: 10.1142/S0218127418501286

Citations: 5
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