Scientific Results

Vapour phase nucleation of ZnO nanowires on GaN: growth habit, interface study and optical properties

Year: 2016

Authors: Baratto C., Ferroni M., Comini E., Faglia G., Kaciulis, Balijepalli S.K., Sberveglieri G.

Autors Affiliation: Sensor Lab., CNR-INO Via Branze 45, 25133 Brescia, Italy;
Sensor Lab., University of Brescia, Dept. of Information Engineering, Via Branze 38, 25133 Brescia, Italy;
CNR–ISMN, P. O. Box 10, Roma, 00015 Monterotondo Stazione, Italy

Abstract: In the current work aligned ZnO nanowires were grown on p-GaN thin films for optoelectronic applications, using a vapour phase technique in a tubular furnace. To investigate the growth of ZnO nanowires at the interface with GaN, the heterojunction were characterized by scanning electron microscopy and X-ray photoelectron spectroscopy. Experimental evidence indicates that the Au catalyst remains at the interface between ZnO and GaN, and that interdiffusion of GaN into ZnO occurs. Concerning the ZnO growth, it starts with Vapour Liquid Solid (VLS) growth from Au catalyzer nanoparticles, then lateral growth takes place making nanowalls. After this initial stage, the nanowires both continue growth by VLS and start growing via a Vapour-Solid (VS) mechanism from the nanowalls. To investigate the potential of the heterostructure of ZnO nanowires on GaN as a light emitting diode, the device was also analysed by current-voltage characterization, photoluminescence and electroluminescence spectroscopy.

Journal/Review: RSC ADVANCES

Volume: 6 (18)      Pages from: 15087  to: 15093

More Information: The research leading to these results has received funding from the European Communities 7th Framework Programme under grant agreement NMP3-LA-2010-246334 ORAMA (Oxide Materials Towards a Matured Post-silicon Electronics Era). Financial support of the European Commission is therefore gratefully acknowledged. The research project “WIROX” Oxide Nanostructures for Wireless Chemical Sensing, PEOPLE MARIE CURIE ACTIONS, International Research Staff Exchange Scheme PIRSES-GA-2011-295216, Call: FP7-PEOPLE-2011-IRSES, 2012-2015 is also acknowledged. In addition the authors thank OSRAM Opto-Semiconductors for providing the GaN templates within the ORAMA project.
DOI: 10.1039/c5ra25019f

Citations: 3
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