High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires
Authors: Jacopin G., Rigutti L., Bugallo A.D.L., Julien F.H., Baratto C., Comini E., Ferroni M., Tchernycheva M.
Autors Affiliation: Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France; Univ Brescia, CNR IDASC SENSOR Lab, Brescia, Italy
Abstract: We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k.p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C) excitonic transition.
Journal/Review: NANOSCALE RESEARCH LETTERS
Volume: 6 Pages from: 501-1 to: 501-6
More Information: This work was supported by the French ANR agency under the programs ANR-08-NANO-031 BoNaFo and ANR-08-BLAN-0179 NanoPhotoNit.KeyWords: Nanowire; Photoluminescence; Polarization; Zinc oxideDOI: 10.1186/1556-276X-6-501Citations: 16data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2023-03-26References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here