Scalable creation of silicon-vacancy color centers in diamond by ion implantation through a 1-μm pinhole
Authors: Hunold L., Lagomarsino S., Flatae A.M., Kambalathmana H., Sledz F., Sciortino S., Gelli N., Giuntini L., Agio M.
Autors Affiliation: Laboratory of Nano-Optics and Cμ, University of Siegen; Istituto Nazionale di Fisica Nucleare Sezione di Firenze; Department of Physics and Astronomy University of Florence; National Institute of Optics, National Research Council (CNR)
Abstract: The controlled creation of quantum emitters in diamond represents a major research effort in the fabrication of single-photon devices. Here, the scalable production of silicon-vacancy (SiV) color centers in single-crystal diamond by ion implantation up to 1 μm depths is presented. The lateral position of the SiV is spatially controlled by a 1- μm pinhole placed in front of the sample, which can be moved nanometer precise using a piezo stage. The initial implantation position is controlled by monitoring the ion beam position with a camera. Hereby, silicon ions are implanted at the desired spots in an area comparable to the diffraction limit. The role of ions scattered by the pinhole and the activation yield of the SiV color centers for the creation of single quantum emitters is also discussed.
Journal/Review: ADVANCED QUANTUM TECHNOLOGIES
Volume: 2021 Pages from: 2100079 to: 2100079
KeyWords: ion implantation, CVD diamond, color centers, single-photon emittersDOI: 10.1002/qute.202100079