Torus Breakdown In A Uni Junction Memristor

Year: 2018

Authors: Ginoux JM., Meucci R., Euzzor S.

Autors Affiliation: UMR CNRS 7020, Lab Informat & Syst, CS 60584, F-83041 Toulon 9, France;‎ CNR, Ist Nazl Ott, E Fermi 6, I-50125 Florence, Italy

Abstract: Experimental study of a uni junction transistor (UJT) has enabled to show that this electronic component has the same features as the so-called “memristor”. So, we have used the memristor’s direct current (DC) current-voltage characteristic for modeling the UJT’s DC current-voltage characteristic. This led us to confirm on the one hand, that the UJT is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown.

Conference title:

KeyWords: UJT; memristor; torus breakdown; bifurcation