Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation
Authors: Lagomarsino S., Flatae A.M., Kambalathmana H., Sledz F., Hunold L., Soltani N., Reuschel P., Sciortino S., Gelli N., Massi M., Czelusniak C., Giuntini L., Agio M.
Autors Affiliation: Laboratory of Nano-Optics and Cµ, University of Siegen, Siegen, Germany; Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, Sesto Fiorentino, Italy; Dipartimento di Fisica e Astronomia, University of Florence, Sesto Fiorentino, Italy; National Institute of Optics (INO), National Research Council (CNR), Florence, Italy
Abstract: Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.
Journal/Review: FRONTIERS IN PHYSICS
Volume: 8 Pages from: 601362-1 to: 601362-15
KeyWords: ion implantation, diamond color centers, silicon-vacancy center, single-photon sources, nano thermometry, doped diamondDOI: 10.3389/fphy.2020.601362