Continuous-wave high-power diode lasers for the 3 µm wavelengths
Authors: Popov A.A., Sherstnev V.V., Yakovlev Y.P., Muecke R.J., Werle P.W.
Autors Affiliation: Ioffe PhysicoTechnical Institute, 194021 St.Petersburg, Russian Federation; IBSG, Polytekhnicheskaya 29, 195251 St.Petersburg, Russian Federation; Fraunhofer Institut IFU, D-82467 Garmisch-Partenkirchen, Germany
Abstract: In this paper we investigate power and temperature characteristics of continuous-wave InAsSb lasers operating in the 3-4 micrometers wavelength range. Basic laser parameters are shown versus direct current and case temperature with special attention to the distribution of optical power between individual laser modes. CW operation temperature as high as 122 K for the InAsSb/InAsSbP double heterostructure lasers grown by liquid phase epitaxy is reported. The influence of temperature on the characteristics is taking into account several non-radiative processes such as Auger processes and carrier leakage due to diffusion effects. Losses and power saturation that observed at a higher temperature (100 K) led to stable single frequency emission at higher temperatures. CW optical power up to 10 mW has been obtained. It is shown that the mode power is limited to about 2 mW both for multi- and for single mode injection lasers in this spectral range. ©2004 Copyright SPIE – The International Society for Optical Engineering.
KeyWords: e da rivista: Continuous wave lasers; Crystal growth; Electric conductivity; Emission spectroscopy; Heterojunctions; Infrared devices; Infrared spectroscopy; Laser spectroscopy; Light emitting diodes; Liquid lasers; Semiconducting indium; Semiconductor lasers; Semiconductor materials; Spectrum analysis; Thickness measurement; Diffusion; Laser modes; Liquid phase epitaxy; Semiconducting indium compounds; Semiconductor diodes; Thermal effects, Auger processes; Carrier leakage; Continuous wave (c.w.); Continuous wave (CW) operation; Diffusion effects; Double heterostructure (DHS); InAsSb lasers; Laser parameters; Liquid-phase; Mid-infrared lasers; Power diodes; Power saturation; Single modes; Single-frequency; Temperature characteristics; Wavelength ranges; Injection lasers; Single mode lasers, Lasers; Semiconductor lasersDOI: 10.1117/12.273805