GaSb and InAs: New materials for metal-semiconductor point-contact diodes
Year: 2003
Authors: Carelli G., De Michele A., Finotti M., K. Bousbahi, Ioli N., Moretti A.
Autors Affiliation: Dipartimento di Fisica-Università di Pisa e INFM-sezione di Pisa ;
IPCF-CNR Pisa, Dipartimento di Fisica e INFM Pisa
Abstract: Metal-semiconductor point contact diodes have proved to be good detectors and mixers for radiation from the far-infrared to visible. Until now GaAs, InSb and InP are the most studied and used semiconductor materials for these devices. In this work we present the performance in the visible and infrared region for metal-semiconductor point-contact diodes with GaSb or InAs as the semiconductor layers. These two new materials have shown good characteristics.
Journal/Review: INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES
Volume: 24 (5) Pages from: 799 to: 811
KeyWords: semiconductors; detectors; mixers; point-contact diodes; DOI: 10.1023/A:1023317211057ImpactFactor: 0.342Citations: 6data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-10-27References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here