GaSb and InAs: New materials for metal-semiconductor point-contact diodes

Year: 2003

Authors: Carelli G., De Michele A., Finotti M., K. Bousbahi, Ioli N., Moretti A.

Autors Affiliation: Dipartimento di Fisica-Università di Pisa e INFM-sezione di Pisa ;
IPCF-CNR Pisa, Dipartimento di Fisica e INFM Pisa

Abstract: Metal-semiconductor point contact diodes have proved to be good detectors and mixers for radiation from the far-infrared to visible. Until now GaAs, InSb and InP are the most studied and used semiconductor materials for these devices. In this work we present the performance in the visible and infrared region for metal-semiconductor point-contact diodes with GaSb or InAs as the semiconductor layers. These two new materials have shown good characteristics.

Journal/Review: INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES

Volume: 24 (5)      Pages from: 799  to: 811

KeyWords: semiconductors; detectors; mixers; point-contact diodes;
DOI: 10.1023/A:1023317211057

ImpactFactor: 0.342
Citations: 6
data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-10-27
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