Electrical excitation of color centers in n-type diamond Schottky diodes

Year: 2025

Authors: Sledz F., Khramtsov I.A., Flatae AM., Lagomarsino S., Sciortino S., Nicley S.S., Rouzbahani R., Pobedinskas P., Guo T.X., Jiang X., Kienitz P., Bolivar P.H., Haenen K., Fedyanin D.Y., Agio M.

Autors Affiliation: Univ Siegen, Lab Nanoopt, Siegen, Germany; Moscow Ctr Adv Studies, Moscow, Russia; Ist Nazl Fis Nucl, Sez Firenze, Sesto Fiorentino, Italy; Univ Florence, Dept Phys & Astron, Sesto Fiorentino, Italy; Natl Res Council CNR, Natl Inst Opt INO, Sesto Fiorentino, Italy; Hasselt Univ, Inst Mat Res IMO, Diepenbeek, Belgium; Hasselt Univ, IMOMEC, Diepenbeek, Belgium; IMEC Vzw, Diepenbeek, Belgium; Michigan State Univ, Dept Elect & Comp Engn, E Lansing, MI USA; Univ Siegen, Lehrstuhl Oberflachen & Werkstofftechnol, Siegen, Germany; Univ Siegen, Grp Graphene Based Nanotechnol, Siegen, Germany.

Abstract: Color centers in diamond are promising systems for quantum technologies and nanophotonics as they are photostable emitters at room and elevated temperatures. The possibility of their electrical excitation has already been demonstrated within p-i-n diodes. However, this requires the growth of complex diamond structures. In contrast to these conventional approaches, we demonstrate the emission from color centers under electrical pumping in a Schottky diode configuration based on n-type diamond. Hydrogen passivation allows the modification of the Schottky barrier height and improves the injection of minority charge carriers needed for the electrical pumping, while electrons are provided by the n-type layer.

Journal/Review: PHYSICAL REVIEW APPLIED

Volume: 23 (5)      Pages from: 54060-1  to: 54060-9

More Information: The authors gratefully acknowledge financial support from the University of Siegen, the German Research Association (DFG) (INST 221/118-1 FUGG, 410405168) , the Hasselt University Special Research Fund (BOF) , the Research Foundation Flanders (FWO-G0D4920N) , and the Methusalem NANO network. The authors also acknowledge INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for their support and precious contributions in terms of instrumentation and personnel. The authors F.S., A.M.F., and M.A. filed a patent for a diamond LE D based on the results of this work (patent pending, DE102021123907.9) .
KeyWords: Single; Emission
DOI: 10.1103/PhysRevApplied.23.054060