Metal Oxide Semiconductors for Dye- and Quantum-Dot-Sensitized Solar Cells
Authors: Concina I., Vomiero A.
Autors Affiliation: CNR INO SENSOR Lab, I-25123 Brescia, Italy; Univ Brescia, I-25133 Brescia, Italy; Lulea Univ Technol, S-97198 Lulea, Sweden
Abstract: This Review provides a brief summary of the most recent research developments in the synthesis and application of nanostructured metal oxide semiconductors for dye sensitized and quantum dot sensitized solar cells. In these devices, the wide bandgap semiconducting oxide acts as the photoanode, which provides the scaffold for light harvesters (either dye molecules or quantum dots) and electron collection. For this reason, proper tailoring of the optical and electronic properties of the photoanode can significantly boost the functionalities of the operating device. Optimization of the functional properties relies with modulation of the shape and structure of the photoanode, as well as on application of different materials (TiO2, ZnO, SnO2) and/or composite systems, which allow fine tuning of electronic band structure. This aspect is critical because it determines exciton and charge dynamics in the photoelectrochemical system and is strictly connected to the photoconversion efficiency of the solar cell. The different strategies for increasing light harvesting and charge collection, inhibiting charge losses due to recombination phenomena, are reviewed thoroughly, highlighting the benefits of proper photoanode preparation, and its crucial role in the development of high efficiency dye sensitized and quantum dot sensitized solar cells.
Volume: 11 (15) Pages from: 1744 to: 1774
KeyWords: dye sensitized solar cells; quantum dot solar cells; metal oxide semiconductors; nanostructured photoanodesDOI: 10.1002/smll.201402334Citations: 98data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2023-02-05References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here