Nanometre scale 3D nanomechanical imaging of semiconductor structures from few nm to sub-micrometre depths

Anno: 2015

Autori: Kolosov O.V., Dinelli F., Robson A., Krier A., Hayne M., Fal\’Ko V.I., Henini M.

Affiliazione autori: Physics Department, Lancaster University, Lancaster, LA1 4YB, United Kingdom; CNR – INO, Pisa, Italy; School of Physics and Astronomy, University of Nottingham, Nottingham, United Kingdom

Abstract: Multilayer structures of active semiconductor devices (1), novel memories (2) and semiconductor interconnects are becoming increasingly three-dimensional (3D) with simultaneous decrease of dimensions down to the few nanometres length scale (3). Ability to test and explore these 3D nanostructures with nanoscale resolution is vital for the optimization of their operation and improving manufacturing processes of new semiconductor devices. While electron and scanning probe microscopes (SPMs) can provide necessary lateral resolution, their ability to probe underneath the immediate surface is severely limited. Cross-sectioning of the structures via focused ion beam (FIB) to expose the subsurface areas often introduces multiple artefacts that mask the true features of the hidden structures, negating benefits of such approach. In addition, the few tens of micrometre dimension of FIB cut, make it unusable for the SPM investigation.

Titolo Convegno:

Maggiori informazioni: Engineering and Physical Sciences Research Council, EPSRC, EP/G015570/1. Engineering and Physical Sciences Research Council, EPSRC, EP/G06556X/1. Engineering and Physical Sciences Research Council, EPSRC, EP/K023373/1.
Parole chiavi: FORCE MICROSCOPY; SUBSURFACE; Focused ion beam (FIB); Scanning probe microscopes (SPMs); Semiconductor devices structures

DOI: 10.1109/IITC-MAM.2015.7325609