Stoichiometry Gradient, Cation Interdiffusion, and Band Alignment between a Nanosized TiO2 Blocking Layer and a Transparent Conductive Oxide in Dye-Sensitized Solar Cell Front Contacts
Anno: 2015
Autori: Salvinelli G., Drera G., Baratto C., Braga A., Sangaletti L.
Affiliazione autori: Univ Cattolica Sacro Cuore, Interdisciplinary Labs Adv Mat Phys I LAMP, I-25121 Brescia, Italy; Univ Cattolica Sacro Cuore, Dipartimento Matemat & Fis, I-25121 Brescia, Italy; CNR, INO, Sensor Lab, I-25133 Brescia, Italy; Univ Brescia, Dept Informat Engn, I-25133 Brescia, Italy.
Abstract: An angle-resolved photoemission spectroscopy study allowed us to identify cation interdiffusion and stoichiometry gradients at the interface between a nanosized TiO2 blocking layer and a transparent conductive Cd-Sn oxide substrate. A stoichiometry gradient for the Sn cations is already found in the bare Cd-Sn oxide layer. When TiO2 ultrathin layers are deposited by RF sputtering on the Cd-Sn oxide layer, Ti is found to partially replace Sn, resulting in a Cd-Sn-Ti mixed oxide layer with a thickness ranging from 0.85 to 3.3 nm. The band gap profile across the junction has been reconstructed for three TiO2 layers, resulting in a valence band offset decrease (and a conduction band offset increase) with the blocking layer thickness. The results are related to the cell efficiencies in terms of charge injection and recombination processes.
Giornale/Rivista: ACS APPLIED MATERIALS & INTERFACES
Volume: 7 (1) Da Pagina: 765 A: 773
Parole chiavi: DSSC; blocking layer; DOI: 10.1021/am5072018Citazioni: 8dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-12-01Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui
