High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

Anno: 2011

Autori: Jacopin G., Rigutti L., Bugallo A.D.L., Julien F.H., Baratto C., Comini E., Ferroni M., Tchernycheva M.

Affiliazione autori: Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France; Univ Brescia, CNR IDASC SENSOR Lab, Brescia, Italy

Abstract: We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k.p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the X(C) excitonic transition.

Giornale/Rivista: NANOSCALE RESEARCH LETTERS

Volume: 6      Da Pagina: 501-1  A: 501-6

Maggiori informazioni: This work was supported by the French ANR agency under the programs ANR-08-NANO-031 BoNaFo and ANR-08-BLAN-0179 NanoPhotoNit.
Parole chiavi: Nanowire; Photoluminescence; Polarization; Zinc oxide
DOI: 10.1186/1556-276X-6-501

Citazioni: 15
dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2023-02-05
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