High-sensitivity detection of NO2 using a 740 nm semiconductor diode laser
Autori: Gianfrani L., Gagliardi G., Pesce G., Sasso A.
Affiliazione autori: Dipartimento di Scienze Fisiche, Univ. di Napoli Federico II, INFM, Mostra d
Abstract: An AlGaAs diode laser was used to detect NO2 absorption lines belonging to the (000)-(2131) vibrational band, within the (X) over tilde(2) A(1) electronic ground state, at 739 nm. A simple absorption spectrometer based on wavelength-modulation spectroscopy with second-harmonic detection was developed. The minimum detectable pressure of pure NO2 was 0.1 mu bar with 2 m absorption path-length, corresponding to an absorbance of 10(-6). High-sensitivity detection of NO2 was also performed in the presence of N-2 and air at different total pressures: The effects on the detection limit of our apparatus were accurately investigated. The minimum NO2 concentration at 500 mbar of air was measured to be 2 ppm.
Giornale/Rivista: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 64 (4) Da Pagina: 487 A: 491
Parole chiavi: Nitrogen oxides; Pressure; Spectrometers; Spectroscopy, Absorption spectrometer; Electronic ground state; High sensitivity detection; Vibrational band; Wavelength modulation spectroscopy; Semiconductor lasersDOI: 10.1007/s003400050204Citazioni: 23dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2022-01-23Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui