Atomic lithography with barium atoms
Anno: 2005
Autori: Fioretti A., Camposeo A., Tantussi F., Arimondo E., Gozzini S., Gabbanini C.
Affiliazione autori: CNR, Ist Proc Chim Fis, I-56124 Pisa, Italy; Univ Pisa, INFM, Dipartimento Fis E Fermi, Pisa
Abstract: We present the formation of structures created by barium atoms using a lithographic technique. The interaction of barium atoms with the resist, followed by an etching process, creates well defined structures with features below 100 nm. The interaction of the ground state of Ba atoms with the molecules forming the self-assembled monolayer (SAM) is compared with the metastable Ba atoms-SAM interaction. The results show that metastable atoms require a lower Ba dose per SAM molecule to damage the resist, therefore increasing the efficiency of the process. (c) 2005 Elsevier B.V. All rights reserved.
Giornale/Rivista: APPLIED SURFACE SCIENCE
Volume: 248 (1-4) Da Pagina: 196 A: 199
Parole chiavi: lithographyDOI: 10.1016/j.apsusc.2005.03.001Citazioni: 15dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-03-24Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui