Supramolecular organization in ultra-thin films of alpha-sexithiophene on silicon dioxide
Anno: 2005
Autori: Loi M.A., Da Como E., Dinelli F., Murgia R., Zamboni R., Biscarini F., Muccini M.
Affiliazione autori: CNR, Ist Studio Mat Nanostrutturati, Sez Bologna, I-40129 Bologna, Italy
Abstract: The supramolecular organization of organic semiconductors on the dielectric layer of thin-film field-effect transistors is a crucial factor in achieving good device performance. Charge transport in these devices occurs near the interface with the gate dielectric. By confocal spectroscopy and microscopy we study the supramolecular organization in ultra-thin films of a prototype organic semiconductor, alpha-sexithiophene, on silicon dioxide, a widely used transistor gate dielectric. We demonstrate that in submonolayer films of sexithiophene (T6), regions where the molecules stand on their long molecular axis coexist with regions where the molecules lie flat on the substrate. When the first monolayer is completed, all T6 molecules stand on the substrate, and the flat molecules detected in the submonolayer films are no longer present. In films thicker than two monolayers, the photoluminescence spectra of standing molecules show a molecular H-like aggregation as in the single crystal.
Giornale/Rivista: NATURE MATERIALS
Volume: 4 (1) Da Pagina: 81 A: 85
Parole chiavi: FIELD-EFFECT TRANSISTORS; SEXITHIENYL SINGLE-CRYSTAL; CONJUGATED POLYMERS; CHARGE-TRANSPORT; 4.2 K; MOBILITY; OLIGOMER; DISPLAYS; DEVICES; DRIVENDOI: 10.1038/nmat1279Citazioni: 196dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-05-12Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui