Relaxation oscillations in single-frequency InAsSb narrow band-gap lasers
Anno: 1998
Autori: Popov A., Sherstnev V., Yakovlev Y., Werle P., Mücke R.
Affiliazione autori: Ioffe Physico Technical Institute, Politekhnicheskaya 26, 194021 St. Petersburg, Russian Federation; Fraunhofer Institut IFU, 82467 Garmisch-Partenkirchen, Germany
Abstract: Relaxation oscillations have been investigated in A3B5 narrow band-gap semiconductor lasers. Based on wideband intensity noise measurements, the relaxation oscillation frequency has been observed up to 2 GHz for a 2 mW cw single-frequency InAsSb laser at a 3.4 µm wavelength. Laser parameters that influence the bandwidth, including the photon lifetime tp, the differential gain A and the spontaneous recombination lifetime ts were calculated from experimental data obtained at 95 K. We found tp in the range 0.7-1.9 ps, A was estimated to be (4.7-7.3)×10-6cm-3s-1 and ts=2.5-6.9ns. Relaxation oscillations occurred beyond the modulation bandwidth required for typical applications of antimonide lasers in spectroscopy.
Giornale/Rivista: APPLIED PHYSICS LETTERS
Volume: 72 (26) Da Pagina: 3428 A: 3430
Parole chiavi: Bandwidth; Heterojunctions; Photodetectors; Photons; Refractive index; Semiconductor lasers; Spectroscopy; Substrates, Antimonide lasers; Band gap lasers; Differential gain; Relaxation oscillations; Side mode suppression ratio, OscillationsDOI: 10.1063/1.121655Citazioni: 3dati da “WEB OF SCIENCE” (of Thomson Reuters) aggiornati al: 2024-05-12Riferimenti tratti da Isi Web of Knowledge: (solo abbonati) Link per visualizzare la scheda su IsiWeb: Clicca quiLink per visualizzare la citazioni su IsiWeb: Clicca qui