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The center for production of single-photon emitters at the electrostatic-deflector line of the Tandem accelerator of LABEC (Florence)

  Articoli su Riviste JCR/ISI  (anno 2018)

Autori:  Lagomarsino S., Sciortino S., Gelli N., Flatae A.M., Gorelli F., Santoro M., Chiari M., Czelusniac C., Massi M., Taccetti F., Agio M., Giuntini L

Affiliazione Autori:  Istituto Nazionale di Fisica Nucleare, Sezione di Firenze, 50019 Sesto Fiorentino, Italy; Laboratory of Nano-Optics, University of Siegen, 57072 Siegen, Germany; Department of Physics and Astrophysics, University of Florence, 50019 Sesto Fiorentino, Italy; National Institute of Optics (INO-CNR), 50019 Sesto Fiorentino, Italy; European Laboratory for Nonlinear Spectroscopy (LENS), 50019 Sesto Fiorentino, Italy

Riassunto:  The line for the pulsed beam of the 3 MeV Tandetron accelerator at LABEC (Florence) has been upgraded for ion implantation experiments aiming at the fabrication of single-photon emitters in a solid-state matrix. A system based on Al attenuators has been calibrated in order to extend the energy range of the implanted ions from MeV down to the tens of keV. A new motorized XY stage has been installed in the implantation chamber for achieving ultra-fine control on the position of each implanted ion, allowing to reach the scale imposed by lateral straggling. A set-up for the activation of the implanted ions has been developed, based on an annealing furnace operating under controlled high-vacuum conditions. The first experiments have been performed with silicon ions implanted in diamond and the luminescent signal of the silicon-vacancy (SiV) center, peaked at 738 nm, has been observed for a wide range of implantation fluences (108 ÷ 1015 cm−2) and implantation depths (from a few nm to 2.4 µm). Studies on the efficiency of the annealing process have been performed and the activation yield has been measured to range from 1% to 3%. The implantation and annealing facility has thus been tuned for the production of SiV centers in diamond, but is in principle suitable for other ion species and solid-state matrices.

Volume n.:  422      Pagine da: 31  a: 40
Parole chiave: Ion implantatio - Pulsed ion beams - Single-photon emitters - Silicon-vacancy centers in diamond
DOI: 10.1016/j.nimb.2018.02.020

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