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3D reconstruction of pentacene structural organization in top-contact OTFTs via resonant soft X-ray reflectivity

  Articoli su Riviste JCR/ISI  (anno 2018)

Autori:  Capelli R, Nardi M.V., Tuccoli T., Verucchi R., Dinelli F., Gelsomini C., Kpshmak K., Giglia A., Nannarone S., Pasquali L

Affiliazione Autori:  IOM-CNR, Trieste INO-CNR, Pisa IMEM-CNR, Trento Dip. Ing., Univ. Modena e Reggio Emilia

Riassunto:  Herein, we describe the use of soft X-ray reflectivity at the carbon K-edge to study the molecular organization (orientation, structure, and morphology) of pentacene active films in a top-contact transistor geometry. This technique is not affected by sample charging, and it can be applied in the case of insulating substrates. In addition, the sampling depth is not limited to the near-surface region, giving access to buried device interfaces (metal/organic and dielectric/organic). Spectral lineshape simulations, based on ab-initio calculations using a realistic 3D layer-by-layer model, allow us to unravel the details of the molecular organization in all the specific and crucial areas of the active film, overcoming the limitations of conventional approaches. The tilt angle of the long molecular axis in the whole film is found to progressively decrease with respect to the substrate normal from 25° to 0° with the increasing film thickness. A full vertical alignment, optimal for in-plane charge hopping, is reached only after the complete formation of the first five monolayers. Remarkably, starting from the first one in contact with the dielectric substrate, all the monolayers in the stack show a change in orientation with the increasing thickness. On the other hand, at the buried interface with a gold top-contact, the molecules assume a flat orientation that only propagates for two or three monolayers into the organic film. Top-contact devices with the highest performances can thus be obtained using films of at least ten monolayers. This explains the observed thickness dependence of charge mobility in pentacene transistors.

Rivista/Giornale:  APPLIED PHYSICS LETTERS
Volume n.:  112      Pagine da: 031602  a: 031605
Parole chiave: OTFT - Pentacene - Organic electronics - Thin films - RSXRR


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