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Controlling In-Plane Isotropic and Anisotropic Orientation of Organic Semiconductor Molecules on Ionic Fluoride Dielectrics

  Articoli su Riviste JCR/ISI  (anno 2017)

Autori:  Jiang T.M., Koshmak K., Giglia A., Banshchikov A., Sokolov N.S., Dinelli F., Capelli R., Pasquali L

Affiliazione Autori:  Institut des Sciences Moléculaires d’Orsay, ISMO, UMR 8214, Université Paris Sud, Bâtiment 351, 91405 Orsay, France Dipartimento di Ingegneria E. Ferrari, Università di Modena e Reggio Emilia, Via Vivarelli 10, 41125 Modena, Italy CNR-IOM s.s. 14, Km. 163.5 in AREA Science Park, 34149 Basovizza, Trieste, Italy Solid State Physics Division, Ioffe Physical-Technical Institute of Russian Academy of Sciences, 26 Polytechnicheskaya str., 194021 St. Petersburg, Russia CNR-INO Area della Ricerca di Pisa - S. Cataldo, via Moruzzi,1, I-56124 Pisa, Italy Department of Physics, University of Johannesburg, P.O. Box 524, Auckland Park 2006, South Africa

Riassunto:  alpha-Sexithiophene (6T) ultrathin films have been grown on CaF2(111)/Si(111) planar surfaces and on CaF2(110)/Si(001) ridged surfaces by molecular beam epitaxy. The growth mode has been studied by means of atomic force microscopy (AFM), photoemission, and near edge X-ray absorption fine structure (NEXAFS). AFM reveals a substantial difference in the film morphology on the two substrates: on CaF2(111) large islands with flat terraces form with no in-plane preferential growth direction; on CaF2(110) narrow and elongated islands develop following the substrate corrugation. Photoemission and X-ray absorption at Ca L-2,L-3 and F K edges indicate that the interaction with the substrate is negligible. Near-edge X-ray absorption (NEXAFS) flanked by DFT calculations of the angular-resolved absorption cross section of 6T at the carbon K-edge reveal that the molecules on both substrates have their long axis vertically oriented with respect to the substrate plane. In addition, in-plane anisotropy of the molecular orientation has been observed on CaF2(110), and it has been interpreted in terms of well aligned molecules in the elongated islands.

Volume n.:  121 (8)      Pagine da: 4426  a: 4433
Ulteriori informazioni:  DOI: 10.1021/acs.jpcc.6b12926
Parole chiave: CAF2 - Electronic-Structure - Sexithiophene Single-Crystals - Thin-Films
DOI: 10.1021/acs.jpcc.6b12926

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