INO
CNR
vai_a_storia   vai_a_organizzazione   vai_a_sedi   vai_a_personale   Area Riservata
    English English Version  
 
 

Design and performance of SiPM-based readout of PbF2 crystals for high-rate, precision timing applications

  Articoli su Riviste JCR/ISI  (anno 2017)

Autori:  Kaspar J., Fienberg A.T., Hertzog D.W., Huehn M.A., Kammel P., Khaw K.S., Peterson D.A., Smith M.W., Van Wechel T.D., Chapelain A., Gibbons L.K., Sweigart D.A., Ferrari C., Fioretti A., Gabbanini C., Venanzoni G., Iacovacci M., Mastroianni S., Giovanetti K., Gohn W., Gorringe T., Pocanic D

Affiliazione Autori:  University of Washington, Department of Physics, Box 351560, Seattle, WA, 98195 U.S.A. Cornell University, Department of Physics, 511 Clark Hall, Ithaca, NY, 14853 U.S.A. Laboratori Nazionali Frascati dell’INFN, Via E. Fermi 40, Frascati, 00044 Italy Istituto Nazionale di Ottica del C.N.R., UOS Pisa, Via Moruzzi 1, Pisa, 56124 Italy INFN, Sezione di Napoli, Ed. 6, Via Cintia, Napoli, 80126 Italy Università di Napoli, Corso Umberto I 40, Napoli, 80138 Italy James Madison University, Department of Physics and Astronomy, 901 Carrier Dr, Harrisonburg, VA, 22807 U.S.A. University of Kentucky, Department of Physics and Astronomy, 505 Rose Street, Lexington, KY, 40506 U.S.A. University of Virginia, Department of Physics, 382 McCormick Rd, Charlottesville, VA, 22904 U.S.A.

Riassunto:  We have developed a custom amplifier board coupled to a large-format 16-channel Hamamatsu silicon photomultiplier device for use as the light sensor for the electromagnetic calorimeters in the Muon g-2 experiment at Fermilab. The calorimeter absorber is an array of lead-fluoride crystals, which produces short-duration Cherenkov light. The detector sits in the high magnetic field of the muon storage ring. The SiPMs selected, and their accompanying custom electronics, must preserve the short pulse shape, have high quantum efficiency, be non-magnetic, exhibit gain stability under varying rate conditions, and cover a fairly large fraction of the crystal exit surface area. We describe an optimized design that employs the new-generation of thru-silicon via devices. The performance is documented in a series of bench and beam tests.

Rivista/Giornale:  JOURNAL OF INSTRUMENTATION
Volume n.:  12      Pagine da: P01009-1  a: P01009-20
Ulteriori informazioni:  DOI: 10.1088/1748-0221/12/01/P01009
Parole chiave: Front-end electronics for detector redou - Photon detectors for UV - visible and IR photons - Calorimeters - Timing detectors
Collegamento Web del Prodotto: Clicca qui


INO © Istituto Nazionale di Ottica - Largo Fermi 6, 50125 Firenze | Tel. 05523081 Fax 0552337755 - P.IVA 02118311006     P.E.C.    Info